Please use this identifier to cite or link to this item:
Files in This Item:
File Description SizeFormat 
ncomms10387.pdf750.8 kBAdobe PDFView/Open
ncomms13911-s1.pdf1.3 MBAdobe PDFView/Open
Title: Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots
Authors: Chen, YanZhang, JiaxiangZopf, MichaelJung, KyubongZhang, YangKeil, RobertDing, FeiSchmidt, Oliver G.
Publishers Version:
Issue Date: 2016
Published in: Nature Communications, Volume 7
Publisher: London : Nature Publishing Group
Abstract: Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.
Keywords: Synthesis and processing; Two-dimensional materials
DDC: 620
License: CC BY 4.0 Unported
Link to License:
Appears in Collections:Ingenieurwissenschaften

This item is licensed under a Creative Commons License Creative Commons