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Title: Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (112̄ 2) GaN templates
Authors: Niehle, M.Trampert, A.Albert, S.Bengoechea-Encabo, A.Calleja, E.
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Issue Date: 2015
Published in: APL Materials, Volume 3, Issue 3
Publisher: New York : American Institute of Physics
Abstract: We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2 ̄ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.
Keywords: Indium; Tomography; III-V semiconductors; Transmission electron; microscopy; Heterojunctions
DDC: 530
License: CC BY 3.0 Unported
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Appears in Collections:Physik

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