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Title: Structural properties of Co2TiSi films on GaAs(001)
Authors: Jenichen, B.Herfort, J.Hanke, M.Jahn, U.Kong, X.Dau, M. T.Trampert, A.Kirmse, H.Erwin, S. C.
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Issue Date: 2016
Published in: Journal of Applied Physics, Volume 120, Issue 22
Publisher: New York : American Institute of Physics
Abstract: Co2TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the L21 and B2 structures and considering the influence of non-stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13 nm, these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found L21 and B2 ordered regions, however the [Co]/[Ti]-ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic B2-ordering with the best order parallel to the axes of the columns.
Keywords: Carbon dioxide; Lattice constants; X-ray diffraction; Epitaxy; Thin film growth
DDC: 530
License: CC BY 4.0 Unported
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Appears in Collections:Physik

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