Please use this identifier to cite or link to this item:
Files in This Item:
File SizeFormat 
Luna_2007_New_J._Phys._9_405.pdf1.41 MBAdobe PDFView/Open
Title: Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy
Authors: Luna, E.Trampert, A.Pavelescu, E.-M.Pessa, M.
Publishers Version:
Issue Date: 2007
Published in: New Journal of Physics, Volume 9
Publisher: Milton Park : Taylor & Francis
Abstract: Transmission electron microscopy (TEM) is used to determine the composition of quaternary (Ga,In)(N,As) quantum wells (QWs). Through a combined analysis of the chemically sensitive (002) dark-field (DF) images and the lattice-resolving high-resolution TEM images, the local distributions of nitrogen and indium in the growth direction are determined. In particular, we are able to directly detect the existence of indium segregation in (Ga,In)(N,As) QWs. A comparison with the indium distribution profile in the nitrogen-free (In,Ga)As QWs, grown under similar conditions, revealed that incorporating N into the alloy enhanced indium segregation.
DDC: 530
License: CC BY 3.0 Unported
Link to License:
Appears in Collections:Physik

This item is licensed under a Creative Commons License Creative Commons