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Title: Diffraction at GaAs/Fe3Si core/shell nanowires: The formation of nanofacets
Authors: Jenichen, B.Hanke, M.Hilse, M.Herfort, J.Trampert, A.Erwin, S. C.
metadata.dc.relation.uri: https://arxiv.org/abs/1512.02103
Issue Date: 2016
Published in: AIP Advances, Volume 6, Issue 5
Publisher: Cambridge : arXiv
Abstract: GaAs/Fe3Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe3Si shells exhibit nanofacets. These facets consist of well pronounced Fe3Si{111} planes. Density functional theory reveals that the Si-terminated Fe3Si{111} surface has the lowest energy in agreement with the experimental findings. We can analyze the x-ray diffuse scattering and diffraction of the ensemble of nanowires avoiding the signal of the substrate and poly-crystalline films located between the wires. Fe3Si nanofacets cause streaks in the x-ray reciprocal space map rotated by an azimuthal angle of 30° compared with those of bare GaAs nanowires. In the corresponding TEM micrograph the facets are revealed only if the incident electron beam is oriented along [1 1 ̄ 0] in accordance with the x-ray results. Additional maxima in the x-ray scans indicate the onset of chemical reactions between Fe3Si shells and GaAs cores occurring at increased growth temperatures.
Keywords: III-V semiconductors; X-ray diffraction; Epitaxy Density functional theory; Nanowires
DDC: 530
License: CC BY 4.0 Unported
Link to License: http://creativecommons.org/licenses/by/4.0/
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