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Title: Bicrystalline grain boundary junctions of Co-doped and P-doped Ba-122 thin films
Authors: Schmidt, S.Döring, S.Schmidl, F.Kurth, F.Iida, K.Holzapfel, B.Kawaguchi, T.Mori, Y.Ikuta, H.Seidel, P.
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Issue Date: 2014
Published in: Journal of Physics: Conference Series, Volume 507, Issue Part 1
Publisher: Milton Park : Taylor & Francis
Abstract: We prepared GB junctions of Ba(Fe0.9Co0.1)2As2 thin films on bicrystalline [00 l]-tilt SrTiO3 substrates. The junctions show clear Josephson effects. Electrical characterization shows asymmetric I-V characteristics which can be described within the resistively shunted junction (RSJ) model. A large excess current is observed. Their formal ICRN product is 20.2 μV at 4.2 K, which is decreased to 6.5 μV when taking Iex into account. Fabrication methods to increase this value are discussed. Additionally, measurements on GB junctions of BaFe2(As0.66P0.34)2 thin films on LSAT bicrystalline substrates are shown. Their symmetric RSJ/flux flow-behavior exhibits a formal ICRN product of 45 μV, whereas the excess corrected value is ll μV.
Keywords: Cobalt; Grain boundaries; Semiconductor junctions
DDC: 530
License: CC BY 3.0 Unported
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