Please use this identifier to cite or link to this item:
Files in This Item:
File SizeFormat 
Hilt_2014_J._Phys.__Conf._Ser._494_012001.pdf589,94 kBAdobe PDFView/Open
Title: Normally-off GaN transistors for power applications
Authors: Hilt, O.Bahat-Treidel, E.Brunner, F.Knauer, A.Zhytnytska, R.Kotara, P.Wuerfl, J.
Publishers Version:
Issue Date: 2014
Published in: Journal of Physics: Conference Series, Volume 494
MicroTherm 2013 - Microtechnology and Thermal Problems in Electronics, Łódz, Poland, 25-28 June 2013
Publisher: Milton Park : Taylor & Francis
Abstract: Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated.
Keywords: Heat problems; Thermoanalysis; Threshold voltage
DDC: 530
License: CC BY 3.0 Unported
Link to License:
Appears in Collections:Physik

This item is licensed under a Creative Commons License Creative Commons