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Title: Normally-off GaN transistors for power applications
Authors: Hilt, O.Bahat-Treidel, E.Brunner, F.Knauer, A.Zhytnytska, R.Kotara, P.Wuerfl, J.
Publishers Version: https://doi.org/10.1088/1742-6596/494/1/012001
Issue Date: 2014
Published in: Journal of Physics: Conference Series, Volume 494
MicroTherm 2013 - Microtechnology and Thermal Problems in Electronics, Łódz, Poland, 25-28 June 2013
Publisher: Milton Park : Taylor & Francis
Abstract: Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated.
Keywords: Heat problems; Thermoanalysis; Threshold voltage
DDC: 530
License: CC BY 3.0 Unported
Link to License: https://creativecommons.org/licenses/by/3.0/
Appears in Collections:Physik



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