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| File | Size | Format | |
|---|---|---|---|
| Hilt_2014_J._Phys.__Conf._Ser._494_012001.pdf | 589,94 kB | Adobe PDF | View/Open |
| Title: | Normally-off GaN transistors for power applications |
| Authors: | Hilt, O.; Bahat-Treidel, E.; Brunner, F.; Knauer, A.; Zhytnytska, R.; Kotara, P.; Wuerfl, J. |
| Publishers Version: | https://doi.org/10.1088/1742-6596/494/1/012001 |
| Issue Date: | 2014 |
| Published in: | Journal of Physics: Conference Series, Volume 494 MicroTherm 2013 - Microtechnology and Thermal Problems in Electronics, Łódz, Poland, 25-28 June 2013 |
| Publisher: | Milton Park : Taylor & Francis |
| Abstract: | Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated. |
| Keywords: | Heat problems; Thermoanalysis; Threshold voltage |
| DDC: | 530 |
| License: | CC BY 3.0 Unported |
| Link to License: | https://creativecommons.org/licenses/by/3.0/ |
| Appears in Collections: | Physik |
This item is licensed under a Creative Commons License
