Please use this identifier to cite or link to this item: https://oar.tib.eu/jspui/handle/123456789/4758
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dc.rights.licenseCC BY-NC-ND 4.0 Unportedger
dc.contributor.authorTurishchev, S. Yu.-
dc.contributor.authorChuvenkova, Olga-
dc.contributor.authorParinova, V.E.-
dc.contributor.authorKoyuda, D.A.-
dc.contributor.authorChumakov, Ratibor G.-
dc.contributor.authorPresselt, Martin-
dc.contributor.authorSchleusener, Alexander-
dc.contributor.authorSivakov, Vladimir-
dc.date.accessioned2020-01-03T10:16:42Z-
dc.date.available2020-01-03T10:16:42Z-
dc.date.issued2018-
dc.identifier.urihttp://dx.doi.org/10.34657/29-
dc.identifier.urihttps://oar.tib.eu/jspui/handle/123456789/4758
dc.description.abstractTin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers. The composition of the formed layers were studied by high-resolution X-ray photoelectron spectroscopy of tin (Sn 3d) and oxygen (O 1 s) atoms core levels. The ion beam etching was applied to study the layers depth composition profiles. The composition studies of grown tin oxide layers is shown that the surface of layers contains tin dioxide, but the deeper part contains intermediate tin dioxide and metallic tin phases.eng
dc.language.isoeng-
dc.publisherAmsterdam : Elsevier-
dc.relation.ispartofseriesResults in Physics 11 (2018)-
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/ger
dc.subjectSilicon nanowires-
dc.subjectMetal assisted wet chemical etching-
dc.subjectTin oxides-
dc.subjectMetal-organic chemical vapor deposition-
dc.subjectX-ray photoelectron spectroscopy-
dc.subjectPhase composition-
dc.subject.ddc530-
dc.titleXPS investigations of MOCVD tin oxide thin layers on Si nanowires arrayeng
dc.typearticle-
dc.typeText-
dc.description.versionpublishedVersioneng
local.accessRightsopenAccess-
wgl.contributorIPHTger
wgl.subjectIngenieurwissenschaftenger
wgl.typeZeitschriftenartikelger
dc.bibliographicCitation.firstPage507-
dc.bibliographicCitation.lastPage509-
dc.bibliographicCitation.volume11-
dc.relation.doihttps://doi.org/10.1016/j.rinp.2018.09.046-
dcterms.bibliographicCitation.journalTitleResults in Physics-
local.identifier.doihttp://dx.doi.org/10.34657/29-
Appears in Collections:Ingenieurwissenschaften

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