Please use this identifier to cite or link to this item: https://oar.tib.eu/jspui/handle/123456789/5495
Title: Epitaxial growth and stress relaxation of vapor-deposited Fe-Pd magnetic shape memory films
Authors: Kühnemund, L.Edler, T.Kock, I.Seibt, M.Mayr, S.G.
Publishers Version: https://doi.org/10.1088/1367-2630/11/11/113054
Issue Date: 2009
Published in: New Journal of Physics Vol. 11 (2009)
Publisher: College Park, MD : Institute of Physics Publishing
Abstract: To achieve maximum performance in microscale magnetic shape memory actuation devices epitaxial films several hundred nanometers thick are needed. Epitaxial films were grown on hot MgO substrates (500 °C and above) by e-beam evaporation. Structural properties and stress relaxation mechanisms were investigated by high-resolution transmission electron microscopy, in situ substrate curvature measurements and classical molecular dynamics (MD) simulations. The high misfit stress incorporated during Vollmer-Weber growth at the beginning was relaxed by partial or perfect dislocations depending on the substrate temperature. This relaxation allowed the avoidance of a stressinduced breakdown of epitaxy and no thickness limit for epitaxy was found. For substrate temperatures of 690 °C or above, the films grew in the fee austenite phase. Below this temperature, iron precipitates were formed. MD simulations showed how these precipitates influence the movements of partial dislocations, and can thereby explain the higher stress level observed in the experiments in the initial stage of growth for these films. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Keywords: Austenite phase; Classical molecular dynamics; E beam evaporation; In-situ; Initial stages; Magnetic shape memory; MD simulation; MgO substrate; Micro-scales; Misfit stress; Partial dislocations; Stress levels; Stress-induced breakdown; Substrate curvature; Substrate temperature; Epitaxial films; Epitaxial growth; High resolution transmission electron microscopy; Magnetic thick films; Metallorganic vapor phase epitaxy; Molecular dynamics; Palladium; Residual stresses; Stress relaxation; Vapors; Substrates
DDC: 530
License: CC BY-NC-SA 3.0 Unported
Link to License: https://creativecommons.org/licenses/by-nc-sa/3.0/
Appears in Collections:Physik



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