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Title: Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures
Authors: Schroetter, T.Zaumseil, P.Seifarth, O.Giussani, A.Müssig, H.-J.Storck, P.Geiger, D.Lichte, H.Dabrowski, J.
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Issue Date: 2008
Published in: New Journal of Physics Vol. 10 (2008)
Publisher: College Park, MD : Institute of Physics Publishing
Abstract: The integration of alternative semiconductor layers on the Si material platform via oxide heterostructures is of interest to increase the performance and/or functionality of future Si-based integrated circuits. The single crystalline quality of epitaxial (epi) semiconductor-insulator-Si heterostructures is however limited by too high defect densities, mainly due to a lack of knowledge about the fundamental physics of the heteroepitaxy mechanisms at work. To shed light on the physics of stacking twin formation as one of the major defect mechanisms in (111)-oriented fcc-related heterostructures on Si(111), we report a detailed experimental and theoretical study on the structure and defect properties of epi-Si(111)/Y2O 3/Pr2O3/Si(111) heterostructures. Synchrotron radiation-grazing incidence x-ray diffraction (SR-GIXRD) proves that the engineered Y2O3/Pr2O3 buffer dielectric heterostructure on Si(111) allows control of the stacking sequence of the overgrowing single crystalline epi-Si(111) layers. The epitaxy relationship of the epi-Si(111)/insulator/Si(111) heterostructure is characterized by a type A/B/A stacking configuration. Theoretical ab initio calculations show that this stacking sequence control of the heterostructure is mainly achieved by electrostatic interaction effects across the ionic oxide/covalent Si interface (IF). Transmission electron microscopy (TEM) studies detect only a small population of misaligned type B epi-Si(111) stacking twins whose location is limited to the oxide/epiSi IF region. Engineering the oxide/semiconductor IF physics by using tailored oxide systems opens thus a promising approach to grow heterostructures with well-controlled properties. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Keywords: Corrosion; Crystal growth; Crystalline materials; Crystals; Electric conductivity; Electromagnetic waves; Epitaxial growth; Epitaxial layers; Flow interactions; Integrated circuits; Light; Semiconducting silicon; Semiconducting silicon compounds; Semiconductor materials; Silicon; Ab initio calculations; Controlled properties; Defect mechanisms; Defect properties; Dielectric heterostructure; Electrostatic interactions; Epitaxial silicons; Epitaxy relationships; Fundamental physics; Grazing incidences; Hetero epitaxies; Heterostructure; Heterostructures; High defect densities; Oxide heterostructures; Oxide systems; Promising approaches; Semi-conductors; Semiconductor layers; SI materials; Si(111); Single crystalline qualities; Small populations; Stacking configurations; Stacking sequences; Twin formations; X-ray diffractions; Heterojunctions
DDC: 530
License: CC BY-NC-SA 3.0 Unported
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