Please use this identifier to cite or link to this item:
Files in This Item:
File SizeFormat 
Wang et al 2008, Towards deterministically controlled InGaAs.pdf2,61 MBAdobe PDFView/Open
Title: Towards deterministically controlled InGaAs/GaAs lateral quantum dot molecules
Authors: Wang, L.Rastelli, A.Kiravittaya, S.Atkinson, P.Ding, F.Bof Bufon, C.C.Hermannstädter, C.Witzany, M.Beirne, G.J.Michler, P.Schmidt, O.G.
Publishers Version:
Issue Date: 2008
Published in: New Journal of Physics Vol. 10 (2008)
Publisher: College Park, MD : Institute of Physics Publishing
Abstract: We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by atomic force microscopy (AFM). The AFM investigation showed that different overgrowth procedures have a profound consequence on the QDM height and shape. QDMs partially capped and annealed in situ for micro- photoluminescence spectroscopy consist of shallow but well-defined quantum dots (QDs) in contrast to misleading results usually provided by surface morphology measurements when they are buried by a thin GaAs layer. This uncapping approach is crucial for determining the QDM structural parameters, which are required for modeling the system. A single-band effective-mass approximation is employed to calculate the confined electron and heavy-hole energy levels, taking the geometry and structural information extracted from the uncapping experiments as inputs. The calculated transition energy of the single QDM shows good agreement with the experimentally observed values. By decreasing the edge-to-edge distance between the two QDs within a QDM, a splitting of the electron (hole) wavefunction into symmetric and antisymmetric states is observed, indicating the presence of lateral coupling. Site control of such lateral QDMs obtained by growth on a pre-patterned substrate, combined with a technology to fabricate gate structures at well-defined positions with respect to the QDMs, could lead to deterministically controlled devices based on QDMs. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Keywords: Atomic force microscopy; Electronic properties; Gallium alloys; Lead; Microscopic examination; Molecules; Morphology; Optical design; Optical waveguides; Quantum electronics; Scanning probe microscopy; Semiconducting gallium; Three dimensional; (1 1 0) surface; (OTDR) technology; (p ,p ,t) measurements; (PL) properties; (R ,S)-symmetric; (T ,S)-splitting; Atomic force microscopy (AFM); Capping layer (GC layer); Edge distance; Effective mass approximation (EMA); gate structures; hole energy levels; In-situ; InGaAs/GaAs; Lateral coupling; Micro-photoluminescence spectroscopy; Patterned substrates; Quantum dot molecule (QDM); Quantum dots (QDs); Selective wet chemical etching; Spatial configurations; Structural informations; Structural parameters; Three-dimensional morphology; transition energies; wave functions; Semiconductor quantum dots
DDC: 530
License: CC BY-NC-SA 3.0 Unported
Link to License:
Appears in Collections:Physik

This item is licensed under a Creative Commons License Creative Commons