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Title: Resistive switching in polycrystalline YMnO3 thin films
Authors: Bogusz, A.Müller, A.D.Blaschke, D.Skorupa, I.Bürger, D.Scholz, A.Schmidt, O.G.Schmidt, H.
Publishers Version: https://doi.org/10.1063/1.4899188
Issue Date: 2014
Published in: AIP Advances Vol. 4 (2014), No. 10
Publisher: New York, NY : American Inst. of Physics
Abstract: We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.
Keywords: Polycrystalline; Resistive switching
DDC: 530
License: CC BY 3.0 Unported
Link to License: https://creativecommons.org/licenses/by/3.0/
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