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Title: Integrated sensitive on-chip ion field effect transistors based on wrinkled ingaas nanomembranes
Authors: Harazim, S.M.Feng, P.Sanchez, S.Deneke, C.Mei, Y.Schmidt, O.G.
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Issue Date: 2011
Published in: Nanoscale Research Letters Vol. 6 (2011), No. 1
Publisher: New York, NY [u.a.] : Springer
Abstract: Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.
Keywords: Chlorine compounds; Electrolytes; III-V semiconductors; Ions; Nanostructures; Potash; Potassium chloride; Substrates; Chlorine compounds; Ions; Nanostructures; Transistors; Chloride electrolytes; Fully integrated; Ion separation; Nano channels; Nano-fluidic devices; Nanomembranes; Semiconductor substrate; Straight channel; Fully integrated; II-IV semiconductors; Ion currents; Ion separation; Nano channels; Nano-fluidic devices; Nanomembranes; On chips; Potassium chloride; Single chips; Straight channel; Field effect transistors; Field effect transistors
DDC: 620
License: CC BY 2.0 Unported
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