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Title: Experimental electronic structure of In2O3 and Ga2O3
Authors: Janowitz, C.Scherer, V.Mohamed, M.Krapf, A.Dwelk, H.Manzke, R.Galazka, Z.Uecker, R.Irmscher, K.Fornari, R.Michling, M.Schmeißer, D.Weber, J.R.Varley, J.B.Van De Walle, C.G.
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Issue Date: 2011
Published in: New Journal of Physics Vol. 13 (2011)
Publisher: Bristol : IOP
Abstract: Transparent conducting oxides (TCOs) pose a number of serious challenges. In addition to the pursuit of high-quality single crystals and thin films, their application has to be preceded by a thorough understanding of their peculiar electronic structure. It is of fundamental interest to understand why these materials, transparent up to the UV spectral regime, behave also as conductors. Here we investigate In2O3 and Ga2O3, two binary oxides, which show the smallest and largest optical gaps among conventional n-type TCOs. The investigations on the electronic structure were performed on high-quality n-type single crystals showing carrier densities of ∼1019 cm-3 (In2O3) and ∼1017 cm-3(Ga2O3). The subjects addressed for both materials are: the determination of the band structure along high-symmetry directions and fundamental gaps by angular resolved photoemission (ARPES). We also address the orbital character of the valence- and conduction-band regions by exploiting photoemission cross.
Keywords: Binary oxides; Fundamental gaps; High quality; High quality single crystals; Optical gap; Orbital character; Transparent conducting oxide; Crystal structure; Density functional theory; Diffractive optics; Electronic properties; Electronic structure; Gallium; Photoemission; Single crystals
DDC: 530
License: CC BY-NC-SA 3.0 Unported
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