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Title: GaN-based radial heterostructure nanowires grown by MBE and ALD
Authors: Lari, L.Ross, I.M.Walther, T.Black, K.Cheze, C.Geelhaar, L.Riechert, H.Chalker, P.R.
Publishers Version: https://doi.org/10.1088/1742-6596/471/1/012039
Issue Date: 2013
Published in: Journal of Physics: Conference Series Vol. 471 (2013), No. 1
Publisher: Bristol : Institute of Physics Publishing
Abstract: A combination of molecular beam epitaxy (MBE) and atomic layer deposition (ALD) was adopted to fabricate GaN-based core/shell NW structures. ALD was used to deposit a HfO2 shell of onto the MBE grown GaN NWs. Electron transparent samples were prepared by focussed ion beam methods and characterized using state-of-the-art analytical transmission and scanning transmission electron microscopy. The polycrystalline coating was found to be uniform along the whole length of the NWs. Photoluminescence and Raman spectroscopy analysis confirms that the HfO2 ALD coating does not add any structural defect when deposited on the NWs.
Keywords: Coatings; Gallium alloys; Gallium nitride; Hafnium oxides; High resolution transmission electron microscopy; Ion beams; Molecular beam epitaxy; Scanning electron microscopy; Transmission electron microscopy; Wide band gap semiconductors; Focussed ion beams; Photoluminescence and Raman spectroscopy; Polycrystalline; Radial heterostructure; Scanning transmission electron microscopy; State of the art; Structural defect; Whole lengths; Atomic layer deposition
DDC: 530
License: CC BY 3.0 Unported
Link to License: https://creativecommons.org/licenses/by/3.0/
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