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Title: X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor
Authors: Hrauda, N.Zhang, J.Wintersberger, E.Etzelstorfer, T.Mandl, B.Stangl, J.Carbone, D.Holý, V.Jovanović, V.Biasotto, C.Nanver, L.K.Moers, J.Grützmacher, D.Bauer, G.
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Issue Date: 2011
Published in: Nano Letters Vol. 11 (2011), No. 7
Publisher: Washington, DC : American Chemical Society
Abstract: For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.
Keywords: finite element simulations; ordered island growth; semiconductor nanostructures; silicon germanium; structural investigations; X-ray nanodiffraction; Finite element simulations; Ordered islands; Semiconductor nanostructures; silicon germanium; Structural investigation; X-ray nanodiffraction; Field effect transistors; Germanium; Mechanical properties; Quantum theory; Semiconducting silicon; Semiconducting silicon compounds; Silicon alloys; X rays; Transistors; germanium; quantum dot; silicon; article; chemistry; nanotechnology; particle size; semiconductor; surface property; X ray; Germanium; Nanotechnology; Particle Size; Quantum Dots; Semiconductors; Silicon; Surface Properties; Transistors, Electronic; X-Rays
DDC: 530
License: ACS AuthorChoice
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Appears in Collections:Physik

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