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Title: Terahertz stimulated emission from silicon doped by hydrogenlike acceptors
Authors: Pavlov, S.G.Deßmann, N.Shastin, V.N.Zhukavin, R.K.Redlich, B.van der Meer, A.F.G.Mittendorff, M.Winnerl, S.Abrosimov, N.V.Riemann, H.Hübers, H.-W.
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Issue Date: 2014
Published in: Physical Review X Vol. 4 (2014), No. 2
Publisher: College Park : American Institute of Physics Inc.
Abstract: Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Λ8+ → 1Λ7- , 1Λ6-, 1Λ8- intracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Λ7- , 1Λ6- , and 1Λ8- states, and the lower laser level for both emission lines is the 2Λ8+ state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Λ8+ state and not the 1Λ7+ split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.
Keywords: Optics; Semiconductor physics; Free electron lasers; Light absorption; Nuclear physics; Optics; Quantum well lasers; Stimulated emission; Absorption cross sections; Acceptor centers; Boron-doped silicon; Dominating factors; Population inversions; Pump radiation; Semiconductor physics; Terahertz frequency range; Silicon
DDC: 530
License: CC BY 3.0 Unported
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