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Issue Date	Title	Author(s)
2020	Phase formation and high-temperature stability of very thin co-sputtered Ti-Al and multilayered Ti/Al films on thermally oxidized si substrates	Seifert, M.; Lattner, E.; Menzel, S.B.; Oswald, S.; Gemming, T.
2020	High temperature behavior of rual thin films on piezoelectric CTGS and LGS substrates	Seifert, M.
2020	Valence effect on the thermopower of Eu systems	Stockert, U.; Seiro, S.; Seiro, S.; Caroca-Canales, N.; Hassinger, E.; Hassinger, E.; Geibel, C.
2018	Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing	Xu, X.; Prüfer, T.; Wolf, D.; Engelmann, H.-J.; Bischoff, L.; Hübner, R.; Heinig, K.-H.; Möller, W.; Facsko, S.; von Borany, J.; Hlawacek, G.
2008	Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures	Schroetter, T.; Zaumseil, P.; Seifarth, O.; Giussani, A.; Müssig, H.-J.; Storck, P.; Geiger, D.; Lichte, H.; Dabrowski, J.
2010	Scalable, high power line focus diode laser for crystallizing of silicon thin films	Lichtenstein, N.; Baettig, R.; Brunner, R.; Müller, J.; Valk, B.; Gawlik, A.; Bergmann, J.; Falk, F.
2011	Phenomenology of iron-assisted ion beam pattern formation on Si(001)	MacKo, S.; Frost, F.; Engler, M.; Hirsch, D.; Höche, T.; Grenzer, J.; Michely, T.
2012	Iron-assisted ion beam patterning of Si(001) in the crystalline regime	Macko, S.; Grenzer, J.; Frost, F.; Engler, M.; Hirsch, D.; Fritzsche, M.; Mücklich, A.; Michely, T.
2014	On the electronic properties of a single dislocation	Reiche, M.; Kittler, M.; Erfurth, W.; Pippel, E.; Sklarek, K.; Blumtritt, H.; Haehnel, A.; Uebensee, H.
2011	X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor	Hrauda, N.; Zhang, J.; Wintersberger, E.; Etzelstorfer, T.; Mandl, B.; Stangl, J.; Carbone, D.; Holý, V.; Jovanović, V.; Biasotto, C.; Nanver, L.K.; Moers, J.; Grützmacher, D.; Bauer, G.