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Issue DateTitleAuthor(s)
2010Volumetrical characterization of sheet molding compoundsCalvimontes, A.; Grund, K.; Müller, A.
2012Polyester textile functionalization through incorporation of pH/thermo-responsive microgels. Part II: Polyester functionalization and characterizationGlampedaki, P.; Calvimontes, A.; Dutschk, V.; Warmoeskerken, M.M.C.G.
2017Formation of resonant bonding during growth of ultrathin GeTe filmsWang, Ruining; Zhang, Wei; Momand, Jamo; Ronneberger, Ider; Boschker, Jos E.; Mazzarello, Riccardo; Kooi, Bart J.; Riechert, Henning; Wuttig, Matthias; Calarco, Raffaella
2016Large pinning forces and matching effects in YBa2Cu3O7-δ thin films with Ba2Y(Nb/Ta)O6 nano-precipitatesOpherden, Lars; Sieger, Max; Pahlke, Patrick; Hühne, Ruben; Schultz, Ludwig; Meledin, Alexander; Van Tendeloo, Gustaaf; Nast, Rainer; Holzapfel, Bernhard; Bianchetti, Marco; MacManus-Driscoll, Judith L.; Hänisch, Jens
2017Selective mass enhancement close to the quantum critical point in BaFe2(As1−x P x )2Grinenko, V.; Iida, K.; Kurth, F.; Efremov, D. V.; Drechsler, S.-L.; Cherniavskii, I.; Morozov, I.; Hänisch, J.; Förster, T.; Tarantini, C.; Jaroszynski, J.; Maiorov, B.; Jaime, M.; Yamamoto, A.; Nakamura, I.; Fujimoto, R.; Hatano, T.; Ikuta, H.; Hühne, R.
2015Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin filmsMolatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, Ruben
2016Understanding the growth mechanism of graphene on Ge/Si(001) surfacesDabrowski, J.; Lippert, G.; Avila, J.; Baringhaus, J.; Colambo, I.; Dedkov, Yu S.; Herziger, F.; Lupina, G.; Maultzsch, J.; Schaffus, T.; Schroeder, T.; Kot, M.; Tegenkamp, C.; Vignaud, D.; Asensio, M.-C.
2015Universal electronic structure of polar oxide hetero-interfacesTreske, Uwe; Heming, Nadine; Knupfer, Martin; Büchner, Bernd; Di Gennaro, Emiliano; Khare, Amit; Di Uccio, Umberto Scotti; Granozio, Fabio Miletto; Krause, Stefan; Koitzsch, Andreas
2016Intrinsic and extrinsic pinning in NdFeAs(O,F): Vortex trapping and lock-in by the layered structureTarantini, C.; Iida, K.; Hänisch, J.; Kurth, F.; Jaroszynski, J.; Sumiya, N.; Chihara, M.; Hatano, T.; Ikuta, H.; Schmidt, S.; Seidel, P.; Holzapfel, B.; Larbalestier, D. C.
2015Atomically precise semiconductor-graphene and hBN interfaces by Ge intercalationVerbitskiy, N. I.; Fedorov, A. V.; Profeta, G.; Stroppa, A.; Petaccia, L.; Senkovskiy, B.; Nefedov, A.; Wöll, C.; Usachov, D. Yu.; Vyalikh, D. V.; Yashina, L. V.; Eliseev, A. A.; Pichler, T.; Grüneis, A.